Semiconductor layer,申请号US201113067726-传众专利搜索

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发明名称	Semiconductor layer
摘要	A light-emitting element includes a &bgr;-Ga2O3 substrate, a GaN-based semiconductor layer formed on the &bgr;-Ga2O3 substrate, and a double-hetero light-emitting layer formed on the GaN-based semiconductor layer.
申请公布号	US2011253973(A1)	申请公布日期	2011.10.20
申请号	US201113067726	申请日期	2011.06.22
申请人	KOHA CO., LTD.	发明人	ICHINOSE NOBURO;SHIMAMURA KIYOSHI;AOKI KAZUO;GARCIA VILLORA ENCARNACION ANTONIA
分类号	C30B29/38;H01L33/06;C23C16/34;C30B25/02;C30B25/20;H01L21/20;H01L21/205;H01L29/201;H01L33/32	主分类号	C30B29/38
代理机构		代理人
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