发明名称 Integrated Circuit Package Having Under-Bump Metallization
摘要 An integrated circuit (IC) device uses a simple structure having X/Cu/Sn metal layers (X can be Ti or Ti/W etc.) without extra barrier layer. Thus, number of layers is reduced for a simple fabrication with good production and low cost.
申请公布号 US2011254161(A1) 申请公布日期 2011.10.20
申请号 US201113041702 申请日期 2011.03.07
申请人 HU DYI-CHUNG 发明人 HU DYI-CHUNG
分类号 H01L23/485 主分类号 H01L23/485
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