| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid-state image pickup element that ensures excellent picture quality by reducing generation of a dark current.SOLUTION: A contact portion 18 configured to supply an electric potential used to fix a well region of a first conductivity type, having a photoelectric conversion region 17, transistors 11, 12, 13, and 14, and an isolation region 5 of the first conductivity type formed therein, to a given electric potential is formed on the isolation region 5, and an impurity region 21 of the first conductivity type formed so as to extend in a depth direction from a surface of the isolation region 5 of the first conductivity type and having a sufficiently higher impurity concentration than that of the isolation region 5 of the first conductivity type is formed in the isolation region 5 of the first conductivity type between the contact portion 18 and the photoelectric conversion region 17. |
