| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor self-supporting substrate having an external shape required for improving the yield in manufacturing an epitaxial growth layer which is grown on a substrate and a device using the same.SOLUTION: The nitride semiconductor self-supporting substrate is manufactured by forming a self-supporting single crystal substrate made of nitride semiconductor and by polishing the single crystal substrate from the rear surface to a predetermined thickness, wherein on the outer periphery surface of the single crystal substrate, an inclined surface is formed such that its angle θ from the surface side of the substrate is not less than 70° and not more than 130°. |
