发明名称 |
ETCHANT FOR ELECTRODE AND METHOD OF FABRICATING THIN FILM TRANSISTOR ARRAY PANEL USING THE SAME |
摘要 |
The present invention relates to an etchant for etching metal wiring, and the metal wiring etchant according to the present invention includes hydrogen peroxide at about 5 wt % to about 15 wt %, an oxidant at about 0.5 wt % to about 5 wt %, a fluoride-based compound at about 0.1 wt % to about 1 wt %, a nitrate-based compound at about 0.5 wt % to about 5 wt %, and a boron-based compound at about 0.05 wt % to about 1 wt %.
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申请公布号 |
US2011256712(A1) |
申请公布日期 |
2011.10.20 |
申请号 |
US20100857959 |
申请日期 |
2010.08.17 |
申请人 |
TECHNO SEMICHEM CO., LTD.;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE BYEONG-JIN;PARK HONG-SICK;RHEE TAI-HYUNG;SONG YONG-SUNG;PARK CHOUNG-WOO;OH JONG-HYUN |
分类号 |
H01L21/768;C09K13/00;C09K13/08;C09K13/10 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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地址 |
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