| 摘要 |
<p>Disclosed are: a silicon carbide semiconductor device which comprises an ohmic electrode that has achieved improved adhesion to a wiring line by suppressing deposition of carbon without forming a Schottky contact; and a method for manufacturing the silicon carbide semiconductor device. Specifically, when an ohmic electrode is formed for an SiC semiconductor device, a first metal layer (12) that is formed of a first metal element is formed on one main surface of an SiC layer (11). Meanwhile, an Si layer (13) that is formed of Si is formed on a surface of the first metal layer, said surface being on the reverse side of the surface facing the SiC layer (11). A thus-formed laminated structure (10A) is subjected to a heat treatment. Consequently, there can be obtained a silicon carbide semiconductor device which comprises an ohmic electrode that has good adhesion to a wiring line, while being suppressed in deposition of carbon atoms on the surface layer of the electrode and formation of an Schottky contact between Si and SiC.</p> |
