| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a low resistance state and a high resistance state can be switched only by applying a voltage on a third electrode, and to provide a method for manufacturing the semiconductor device.SOLUTION: A semiconductor device includes a resistance change element 10. The resistance change element 10 includes: an ion conductive layer 14 in which a metal ion can be conducted; and a first electrode 12, a second electrode 16 and a third electrode 17 that are in contact with the ion conductive layer 14. The first electrode 12 and the second electrode 16 are an indifferent electrode that does not contribute to an electrochemical reaction, and are arranged to face each other with the ion conductive layer 14 disposed therebetween, wherein a distance between the first electrode 12 and the second electrode 16 is equal to the thickness of the ion conductive layer 14. The third electrode 17 is an electrode containing an oxidizable metal. An inequality of S1+S2<S3 is satisfied, wherein S1 is an area where the first electrode 12 and the ion conductive layer 14 are in contact with each other, S2 is an area where the second electrode 16 and the ion conductive layer 14 are in contact with each other, and S3 is an area where the third electrode 17 and the ion conductive layer 14 are in contact with each other. |
