| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device suppressing variations in on-state current characteristics, and a method of manufacturing the semiconductor device, and also to provide a light emitting device having excellent image quality and increasing product yield, and an electronic apparatus incorporating the light emitting device.SOLUTION: The method of manufacturing the semiconductor device has steps of: forming impurity semiconductor regions 16 that are to become source/drain regions by ion-doping using a mask including a channel protection layer 15 and forming, simultaneously with activation of the impurity semiconductor regions 16, silicide regions 17 by annealing after film formation of source/drain metal layers on the impurity semiconductor regions 16; forming source/drain electrodes 18 so as to be apart from the channel protection layer 15 by more than the maximum amount of misalignment; and delimiting, simultaneously with patterning of the source/drain metal layers 18x that are to become the source/drain electrodes 18, a device area wherein a thin-film transistor (TFT) is to be formed. |
