| 摘要 |
The invention relates to a method for producing a solar cell composed of a p-doped or n-doped silicon substrate (1), which has a first main surface (2), serving as light incidence side in the use state, and a second main surface (3), serving as a rear side, comprising the following steps: - doping the first main surface (2) with phosphorus, more particularly by diffusion and subsequent drive-in step, for producing a phosphorus doping layer (5) in the first main surface (2) with a concentration profile that is substantially identical over the entire first main surface (2) and/or with a surface concentration that is substantially identical over the entire first main surface (2), - removing a phosphosilicate glass layer (12) produced by the diffusion from the first main surface (2) and/or the second main surface (3), - applying at least one antireflection layer and/or passivation layer (6), more particularly comprising SiN or SiO2/SiN, to the first main surface (2), and - removing the or each antireflection layer and/or passivation layer (6) from parts of the first main surface (2) for the purpose of producing island-like and/or line-like openings (7) for making contact with the silicon substrate (1) wherein the phosphorus doping layer (5) of the first main surface (2) is substantially not altered during the removal. |
