发明名称 |
Semiconductor device, method for manufacturing the same, electro-optical device and electronic apparatus |
摘要 |
A semiconductor device includes a substrate, a transparent oxide layer disposed on one surface side of the substrate, a gate disposed apart from the transparent oxide layer, and a gate insulating layer disposed between the transparent oxide layer and the gate. The transparent oxide layer includes a source, a drain, and a channel formed integrally between the source and the drain, and is made of a transparent oxide material as the main material. The gate provides an electric field to the channel. The gate insulating layer insulates the source and the drain from the gate. The average thickness of the channel is smaller than the average thickness of the source and the drain so that the source and the drain function as conductors and the channel functions as a semiconductor.
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申请公布号 |
US8039835(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20070957012 |
申请日期 |
2007.12.14 |
申请人 |
SHINSHU UNIVERSITY, NATIONAL UNIVERSITY CORPORATION;SEIKO EPSON CORPORATION |
发明人 |
ICHIKIWA MUSUBU;NAKAMURA KIYOSHI;KAMIKAWA TAKETOMI |
分类号 |
H01L29/12 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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