发明名称 |
Thin film transistor array panel and manufacturing method of the same |
摘要 |
A thin film transistor array panel includes a substrate; a gate electrode formed on the substrate; a data line formed on the substrate; a gate insulating layer formed on the data line and the gate electrode, and having a first contact hole exposing the gate electrode, and a second contact hole exposing the data line; a gate line intersecting the data line, and connected to the gate electrode through the first contact hole; a semiconductor formed the gate insulating layer, and including a channel of a thin film transistor; a source electrode connected to the data line through the second contact hole; a drain electrode opposite to the source electrode with respect to the channel on the semiconductor; a passivation layer having a third contact hole exposing the drain electrode; and a pixel electrode connected to the drain electrode through the third contact hole are included. |
申请公布号 |
US8040449(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20090421095 |
申请日期 |
2009.04.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEONG SEOK-JE;CHOI YOON-SEOK;NA HYUNG-DON |
分类号 |
G02F1/136;G02F1/1343;H01L27/01 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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