发明名称 |
Conductive spacers for semiconductor devices and methods of forming |
摘要 |
A method of forming a conductive spacer on a semiconductor device. The method includes depositing a polysilicon layer on the semiconductor device, selectively implanting dopant ions in the polysilicon layer on a first side of a transistor region of the semiconductor device to define a conductive spacer area, and removing the polysilicon layer except for the conductive spacer area. Optionally, a silicidation process can be performed on the conductive spacer area so that the conductive spacer is made up of metal silicide.
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申请公布号 |
US8039888(B2) |
申请公布日期 |
2011.10.18 |
申请号 |
US20070848597 |
申请日期 |
2007.08.31 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BRONNER GARY BELA;FRIED DAVID MICHAEL;GAMBINO JEFFREY PETER;CHANG LELAND;DIVAKARUNI RAMACHANDRA;YIN HAIZHOU;COSTRINI GREGORY;SARDESAI VIRAJ Y. |
分类号 |
H01L29/788;H01L21/336 |
主分类号 |
H01L29/788 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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