| 发明名称 |
ZnO-containing semiconductor layer, its manufacture method, and semiconductor light emitting device |
| 摘要 |
A ZnO-containing semiconductor layer, doped with Se, has an emission peak wavelength in visual light and has a band gap equivalent to a band gap of ZnO.
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| 申请公布号 |
US8039867(B2) |
申请公布日期 |
2011.10.18 |
| 申请号 |
US20090540772 |
申请日期 |
2009.08.13 |
| 申请人 |
STANLEY ELECTRIC CO., LTD. |
发明人 |
OGAWA AKIO;SANO MICHIHIRO;KATO HIROYUKI;HORIO NAOCHIKA;KOTANI HIROSHI;YAMAMURO TOMOFUMI |
| 分类号 |
H01L33/00;H01L33/28 |
主分类号 |
H01L33/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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