发明名称 |
METHODE ZUR HERSTELLUNG EINER VERBINDUNGSSTRUKTUR FÜR DIE ELEKTROMIGRATIONSVERBESSERUNG |
摘要 |
An interconnect structure having enhanced electromigration resistance is provided in which a lower portion of a via opening includes a multi-layered liner. The multi-layered liner includes, from a patterned surface of a dielectric material outwards, a diffusion barrier, a multi-matcrial layer and a metal-containing hard mask. The multi-material layer includes a first material layer comprised of residue from an underlying dielectric capping layer, and a second material layer comprised of residue from an underlying metallic capping layer. The present invention also provides a method of fabricating such an interconnect structure which includes the multi-layered liner within a lower portion of a via opening formed within a dielectric material. |
申请公布号 |
AT525748(T) |
申请公布日期 |
2011.10.15 |
申请号 |
AT20080166329T |
申请日期 |
2008.10.10 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
HORAK, DAVID;PONOTH, SHOM;YANG, CHIH-CHAO |
分类号 |
H01L23/522;H01L21/768;H01L23/532 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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