| 摘要 |
<p>Disclosed is a TFT which employs an oxide semiconductor as an active layer (channel layer) and is provided with a resistance layer between the active layer and either the source electrode or drain electrode, wherein the ON current is increased while Vth is maintained in the vicinity of 0V and a small OFF current is maintained. A thin-film transistor having a gate electrode, gate insulating film, semiconductor layer, source electrode and drain electrode, wherein the semiconductor layer that connects the source electrode and the drain electrode is made of a metallic oxide. This semiconductor layer has three types of regions, namely, a first, a second and a third region. The first region is connected with the source electrode and the third region is connected with the drain electrode. The second region is connected between the first region and the third region. The relation of the resistivities of these three regions is: first region > second region > third region.</p> |
