METHOD OF FORMING MICROCRYSTALLINE SEMICONDUCTOR FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a microcrystalline semiconductor film with high crystallinity and a method of manufacturing with a high-productivity semiconductor device with favorable electrical characteristics.SOLUTION: After a first microcrystalline semiconductor film is formed on a substrate, the surface of the first microcrystalline semiconductor film is flattened, and then, an amorphous semiconductor region on the surface side of the flattened first microcrystalline semiconductor film is removed and a second microcrystalline semiconductor film with high crystallinity and having flatness is formed. Next, a third microcrystalline semiconductor film is formed on the second microcrystalline semiconductor film.