发明名称 |
SPUTTERING APPARATUS AND SPUTTERING METHOD |
摘要 |
The sputtering apparatus has: a vacuum chamber in which a substrate is disposed; a cathode unit which is disposed inside the vacuum chamber so as to lie opposite to the substrate. The cathode unit has mounted a bottomed cylindrical target material 4 from a bottom side thereof into at least one recessed portion formed in one surface of a holder, and has assembled therein a magnetic field generator for generating a magnetic field in an inside space of the target material. The sputtering apparatus further has: an anode shield to which a positive electric potential is applied; a gas introduction device for introducing a sputtering gas into the vacuum chamber; a power supply for activating power to the cathode unit; a vertical magnetic field generator including coils disposed along a wall surface of the vacuum chamber about a reference axis connecting the cathode unit and the substrate, and a power supply; and a controller for switching on or off the introduction of the sputtering gas from the gas introduction device.
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申请公布号 |
US2011247928(A1) |
申请公布日期 |
2011.10.13 |
申请号 |
US200913130589 |
申请日期 |
2009.12.08 |
申请人 |
MORIMNOTO NAOKI;HAMAGUCHI JUNICHI |
发明人 |
MORIMNOTO NAOKI;HAMAGUCHI JUNICHI |
分类号 |
C23C14/35 |
主分类号 |
C23C14/35 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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