| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem with a conventional method, wherein the crystalline orientation (002) of a titanium film is made higher in proportion to a hydrogen partial pressure in a deposition chamber for sputtering, however it is difficult to directly supply the hydrogen gas from a gas cylinder because of a hydrogen gas having a high risk, so that, to avoid this, water is plasma dissociated to generate a hydrogen, but an oxygen generated at the same time as the hydrogen generation undesirably causes deterioration of the quality of the titanium film.SOLUTION: In the method of manufacturing a semiconductor device, water can be plasma-dissociated to generate hydrogen and oxygen, the generated oxygen can be reacted with a gas for oxide film formation to form an oxide, and then the formed oxide can be removed from the deposition chamber. Only the hydrogen remains within the deposition chamber, under which condition, sputtering is carried out to obtain a titanium film having a high crystalline orientation (002). When a titanium nitride film, a second titanium film, and an aluminum film is continuously formed on the titanium film. As a result, the aluminum film can have a high electromigration resistance. |
