摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for producing trichlorosilane, which can heat a raw gas in high heat efficiency while controlling the maximum temperature of the surface of a heater in a reaction chamber.SOLUTION: The apparatus for producing trichlorosilane comprises: a reaction chamber 101 for producing a reaction gas containing trichlorosilane, hydrogen chloride or the like; a plurality of heaters 20 disposed vertically in the reaction chamber 10 to heat a raw gas; and a plurality of electrodes 23 connected to basal portions of the heaters 20, wherein the heaters 20 include first heaters 20a each having an exothermic portion 21a and second heaters 20b each having an exothermic portion 21b shorter than that of the first heater 20a and a radiation plate 24b composed of a non-exothermic portion and connected to an upper end of the exothermic portion 21b, wherein a partial portion of the exothermic portion 21a of the first heater 20a faces the radiation plate 24b of the second heaters 20b. The reaction chamber 101 has an introducing port 11b of the raw gas on a side of the exothermic portion 21b of the second heater 20b, and a discharge port 15 of the reaction gas on a side of the radiation plate 24b of the second heater 20b, among the exothermic portion 21b and the radiation plate 24b of the second heater 20b. |