| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory device that allows switching between a high-resistance state and a low-resistance state of a resistance change layer so as to make it more smoothly, as compared with conventional types.SOLUTION: The nonvolatile memory device has a resistance change element VR in which a lower electrode layer BE, a resistance change layer RW made of a metal oxide film, and an upper electrode layer TE are laminated In the nonvolatile memory device configured to allow a current to flow from the side of the upper electrode layer TE to the side of the lower electrode layer BE, the upper electrode layer TE is composed of a metal nitride material and contains more nitrogen, in comparison with a stoichiometric ratio of the metal nitride material, and the lower electrode layer BE is composed of a metal material. |
