发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To shorten an operation time while preventing the destruction of a memory cell or the like by setting appropriately an upper limit value of a current during an operation.SOLUTION: A memory cell is arranged between first wiring and second wiring and has a variable resistive element. A control circuit applies a voltage required for the operation of the memory cell via the first and the second wiring. A current limiting circuit is connected to the first wiring and limits a current flowing in the memory cell to a prescribed limit value. A control circuit gives the first voltage to the first wiring, and on the other hand, gives the second voltage which is smaller than the first voltage and of which the voltage value is reduced with the lapse of time to the second wiring.
申请公布号 JP2011204288(A) 申请公布日期 2011.10.13
申请号 JP20100067758 申请日期 2010.03.24
申请人 TOSHIBA CORP 发明人 SASAKI TAKAHIKO;KUROSAWA TOMOKI
分类号 G11C13/00;H01L27/10 主分类号 G11C13/00
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