SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To solve the problem that a transistor suffers the variation caused in threshold voltage or mobility due to gathering of the factors of the variation in gate insulator film resulting from a difference in manufacture process or substrate used and of the variation in channel-region crystal state.SOLUTION: The invention relates to an electric circuit having an arrangement such that both electrodes of a capacitance element can hold a gate-to-source voltage of a particular transistor. The electric circuit has a function capable of setting a potential difference at between both the electrodes of the capacitance element by the use of a constant-current source.