| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a silicon single crystal which can more greatly suppress a pinhole formation in the silicon single crystal.SOLUTION: In the method for producing a silicon single crystal by the Czochralski method, a silicon material is melted in a furnace body to obtain silicon melt and then a silicon single crystal is pulled. After melting the silicon material and before the start of pulling the silicon single crystal, a heater output is set to be higher than that during the step of pulling the silicon single crystal, and internal furnace pressure is set as 30 Torr or less, which is lower than that during the step of pulling the silicon single crystal, and then the power and pressure are maintained for a predetermined time. Thereafter, the step of pulling the silicon single crystal is carried out. |
