发明名称 THIN FILM TRANSISTOR AND DISPLAY DEVICE
摘要 To improve problems with on-state current and off-state current of thin film transistors, a thin film transistor includes a pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added, provided with a space therebetween; a conductive layer which is overlapped, over the gate insulating layer, with the gate electrode and one of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added; and an amorphous semiconductor layer which is provided successively between the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added in such a manner that the amorphous semiconductor layer extends over the gate insulating layer from the conductive layer and is in contact with both of the pair of impurity semiconductor layers to which an impurity element imparting one conductivity type is added.
申请公布号 US2011248268(A1) 申请公布日期 2011.10.13
申请号 US201113167762 申请日期 2011.06.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 DAIRIKI KOJI;IKEDA TAKAYUKI;MIYAIRI HIDEKAZU;KUROKAWA YOSHIYUKI;GODO HIROMICHI;KAWAE DAISUKE;INOUE TAKAYUKI;KOBAYASHI SATOSHI
分类号 H01L29/786;H01L21/336 主分类号 H01L29/786
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