发明名称 |
SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD |
摘要 |
PROBLEM TO BE SOLVED: To correct warping that occurs in the formation of a multilayer film.SOLUTION: A single crystal substrate with a multilayer film includes a single crystal substrate 20 and a multilayer film 30 with compressive stress that has at least two layers formed upon one surface of the single crystal substrate 20, wherein the single crystal substrate 20 is equally divided into two regions 20U, 20D in the thickness direction thereof, and a heat denatured layer 22 is disposed within at least the region 20D on the surface side opposite to the surface side, on which the multilayer film 30 has been formed, of the single crystal substrate 20. Also disclosed are a production method therefor and a device production method using the production method. |
申请公布号 |
JP2011201759(A) |
申请公布日期 |
2011.10.13 |
申请号 |
JP20100207186 |
申请日期 |
2010.09.15 |
申请人 |
NAMIKI PRECISION JEWEL CO LTD;DISCO CORP |
发明人 |
AIDA HIDEO;AOTA NATSUKO;HOSHINO HITOSHI;FURUTA KENJI;HAMAMOTO TOMOSABURO;HONJO KEIJI |
分类号 |
C30B25/18;C30B33/04;H01L21/20;H01L21/205;H01L21/268 |
主分类号 |
C30B25/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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