发明名称 SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, PRODUCTION METHOD FOR SINGLE CRYSTAL SUBSTRATE WITH MULTILAYER FILM, AND DEVICE PRODUCTION METHOD
摘要 PROBLEM TO BE SOLVED: To correct warping that occurs in the formation of a multilayer film.SOLUTION: A single crystal substrate with a multilayer film includes a single crystal substrate 20 and a multilayer film 30 with compressive stress that has at least two layers formed upon one surface of the single crystal substrate 20, wherein the single crystal substrate 20 is equally divided into two regions 20U, 20D in the thickness direction thereof, and a heat denatured layer 22 is disposed within at least the region 20D on the surface side opposite to the surface side, on which the multilayer film 30 has been formed, of the single crystal substrate 20. Also disclosed are a production method therefor and a device production method using the production method.
申请公布号 JP2011201759(A) 申请公布日期 2011.10.13
申请号 JP20100207186 申请日期 2010.09.15
申请人 NAMIKI PRECISION JEWEL CO LTD;DISCO CORP 发明人 AIDA HIDEO;AOTA NATSUKO;HOSHINO HITOSHI;FURUTA KENJI;HAMAMOTO TOMOSABURO;HONJO KEIJI
分类号 C30B25/18;C30B33/04;H01L21/20;H01L21/205;H01L21/268 主分类号 C30B25/18
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