| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor storage device that solves problems caused by a difference of silicide reaction between a memory cell region and a peripheral circuit region, by controlling the reaction rates of a semiconductor and a metal, and to provide a method of manufacturing the device.SOLUTION: A gate insulating film 4 and a first conductive film 5 are formed on an upper surface of a silicon substrate 1 and are etched, and an element isolation insulating film 2 is buried and formed. An inter-electrode insulating film 6 and a germanium film 7a are formed. An opening 6a is formed in the inter-electrode insulating film 6 of a gate electrode P in the peripheral circuit area, and a polycrystalline silicon film 9a is formed thereupon. An inter-layer insulating film 10 is embedded, after separation processing on gate electrodes MG and PG and a capacitive element Cap. An upper part of the polycrystalline film 9a is exposed and a metal film is formed and subjected to silicide-making processing. At this time, the silicide-making process progresses rapidly in the memory cell region but becomes slow, after reaching the germanium film 7a, and in the meantime, making silicide reaction in the peripheral circuit region during the period accelerate. |
