| 摘要 |
PROBLEM TO BE SOLVED: To improve productivity of an epitaxial wafer.SOLUTION: An epitaxial growth apparatus 10 includes a growth reaction chamber 12 in which epitaxial growth takes place on a wafer, a discharge pipe 26 for discharging a gas supplied from a gas supply source S from the inside of the growth reaction chamber 12, and a vent side pipe 23 for discharging the gas supplied from the gas supply source S without passing through the growth reaction chamber 12. It includes a plurality of scrubbers 29 connected in the downstream of the discharge pipes 26 of a plurality of epitaxial growth apparatuses 10 correspondingly for purifying the inflow gas, and scrubbers 37 connected in the downstream of the vent side pipe 23 of the plurality of epitaxial growth apparatuses 10 for purifying the inflow gas. |
