The present invention provides a semiconductor interconnect structure with improved mechanical strength at the capping layer/dielectric layer/diffusion barrier interface. The interconnect structure has Cu diffusion barrier material embedded in the Cu capping material. The barrier can be either partially embedded in the cap layer or completely embedded in the capping layer.
申请公布号
EP2084738(A4)
申请公布日期
2011.10.12
申请号
EP20070844133
申请日期
2007.10.11
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
YANG, CHIH-CHAO;YANG, HAINING S.;WONG, KEITH KWONG HON;FAROOQ, MUKTA G.