首页
产品
黄页
商标
征信
会员服务
注册
登录
全部
|
企业名
|
法人/股东/高管
|
品牌/产品
|
地址
|
经营范围
发明名称
METHOD FOR PRODUCTION OF SILICON CARBIDE LAYER, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND SILICON SUBSTRATE
摘要
申请公布号
EP1891663(A4)
申请公布日期
2011.10.12
申请号
EP20060766412
申请日期
2006.05.23
申请人
SHOWA DENKO K.K.
发明人
UDAGAWA, TAKASHI
分类号
H01L21/205;C30B25/02;C30B29/36;H01L21/02
主分类号
H01L21/205
代理机构
代理人
主权项
地址
您可能感兴趣的专利
Kinematic pin with shear member and substrate carrier for use therewith
Stack package utilizing through vias and re-distribution lines
Injection device
Rotational casing associated with an electronic device
Use of a source of chromium with a precipitated catalyst in a Fischer-Tropsch reaction
Stringed musical instrument with improved method and apparatus for tuning and signal processing
Christmas light string with socket for connecting to another christmas light string
Preliminary data producer correlating music data with actual motion, automatic player and musical instrument
System and method for measuring operational life of a computer mouse wheel
Upgradable on-screen display system
Successive interference canceling for CDMA
Apparatus and method for reverse current correction for a switching regulator
Fuel injection control apparatus designed to compensate for deviation of quantity of fuel sprayed from fuel injector
Compact imaging lens system
Method and apparatus for managing network devices
Apparatus and method for the control of trailing wake flows
RAID capacity expansion interruption recovery handling method and system
Methods for the formation of hydrogels using thiosulfonate compositions and uses thereof
Method and apparatus for processing shared sub-packets in a communication system
Semiconductor device manufacturing method
