发明名称 |
Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applications |
摘要 |
A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
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申请公布号 |
US8035153(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20100788177 |
申请日期 |
2010.05.26 |
申请人 |
SPANSION LLC |
发明人 |
FANG SHENQING;CHOI JIHWAN;GABRIEL CALVIN;WANG FEI;HUI ANGELA;NICKEL ALEXANDER;PATEL ZUBIN;JONES PHILLIP;CHANG MARK;NGO MINH-VAN |
分类号 |
H01L29/788 |
主分类号 |
H01L29/788 |
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