发明名称 |
Thin-film transistor substrate having oxide active layer patterns and method of fabricating the same |
摘要 |
A thin-film transistor (TFT) substrate has improved electrical properties and reduced appearance defects and a method of fabricating the TFT substrate, are provided. The TFT substrate includes: gate wiring which is formed on a surface of an insulating substrate; oxide active layer patterns which are formed on the gate wiring and include an oxide of a first material; buffer layer patterns which are disposed on the oxide active layer patterns to directly contact the oxide active layer patterns and include a second material; and data wiring which is formed on the buffer layer patterns to insulatedly cross the gate wiring, wherein a Gibbs free energy of the oxide of the first material is lower than a Gibbs free energy of an oxide of the second material.
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申请公布号 |
US8035110(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20090498816 |
申请日期 |
2009.07.07 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM DO-HYUN;YUN PIL-SANG;KIM KI-WON;LEE DONG-HOON;JEONG CHANG-OH |
分类号 |
H01L29/04 |
主分类号 |
H01L29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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