发明名称 Lorentz magnetoresistive sensor with integrated signal amplification
摘要 A Lorentz magnetoresistive sensor having integrated signal amplification. The sensor is constructed upon a substrate such as a semiconductor material, and an amplification circuit such as transistor is constructed directly into the substrate on which the magnetoresistive device is constructed. This integrated signal amplification greatly enhances sensor performance by eliminating a great deal of signal noise that would otherwise be added to the read signal.
申请公布号 US8035932(B2) 申请公布日期 2011.10.11
申请号 US20070858816 申请日期 2007.09.20
申请人 HITACHI GLOBAL STORAGE TECHNOLOGIES NETHERLANDS B.V. 发明人 GURNEY BRUCE ALVIN;MARINERO ERNESTO E.;TROUP ANDREW STUART;WILLIAMS DAVID ARFON;WUNDERLICH JOERG
分类号 G11B5/60 主分类号 G11B5/60
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