发明名称 |
Methods of forming recessed gate electrodes having covered layer interfaces |
摘要 |
Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers.
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申请公布号 |
US8034701(B2) |
申请公布日期 |
2011.10.11 |
申请号 |
US20090533672 |
申请日期 |
2009.07.31 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE BYUNG-HAK;LEE CHANG-WON;PARK HEE-SOOK;SOHN WOONG-HEE;YOUN SUN-PIL;YOO JONG-RYEOL |
分类号 |
H01L21/3205;H01L21/28;H01L21/336;H01L21/4763;H01L21/76;H01L21/8234;H01L21/8242;H01L27/148;H01L29/51;H01L29/768;H01L29/78 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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