发明名称 |
Frequency Monitoring to Detect Plasma Process Abnormality |
摘要 |
Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
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申请公布号 |
US2011241892(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
US201113042408 |
申请日期 |
2011.03.07 |
申请人 |
PARK BEOM SOO;CHOI SOO YOUNG;WHITE JOHN M;KIM HONG SOON;HOFFMAN JAMES |
发明人 |
PARK BEOM SOO;CHOI SOO YOUNG;WHITE JOHN M.;KIM HONG SOON;HOFFMAN JAMES |
分类号 |
G08B21/00;G01R13/14 |
主分类号 |
G08B21/00 |
代理机构 |
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地址 |
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