METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that suppresses variance in resistance value of an impurity diffusion region.SOLUTION: A dopant impurity is added to a semiconductor layer and an activation heat treatment is carried out for 0.1 to 10 seconds. Then ions are implanted in the semiconductor layer to make amorphous a region of the semiconductor layer to which the dopant impurity is added. Further, an activation heat treatment is carried out for 0.1 to 100 milliseconds to recrystallize the semiconductor layer having been made amorphous, thereby forming a diffusion region of the dopant impurity in the semiconductor layer.