| 摘要 |
PROBLEM TO BE SOLVED: To prevent an increase in power consumption due to excessive lowering of memory cell resistance by properly setting conditions for applying a voltage during a forming operation.SOLUTION: A voltage is applied to both ends of the memory cells MC when the memory cells MC included in a memory cell array 1 performs a forming operation. A current limiter 2b stops applying the voltage when a cell current Icell flowing through the memory cells MC goes beyond a limited current Icompi in the forming operation. Then the limited current Icompi+1 used in the next forming operation becomes larger current by Δi than Icompi. Thus, the forming is completed by repeating application of the voltage and change of the limited current Icomp. |
