| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory reducing a write error.SOLUTION: The magnetic memory includes: a magnetoresistive element 10 including a reference layer 14 having an invariable magnetization direction, a recording layer 12 having a variable magnetization direction, and a non-magnetic layer 13 held between the reference layer 14 and the recording layer 12, and a write circuit 23 for allowing a write current to flow into the magnetoresistive element 10 by using a constant current power supply when setting the magnetization arrangement of the magnetoresistive element 10 from parallel to anti-parallel, and for allowing a write current to flow into the magnetoresistance element 10 by using a constant-voltage power supply when setting the magnetization arrangement of the magnetoresistive element 10 from anti-parallel to parallel. |
