发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which can improve operation reliability.SOLUTION: The nonvolatile semiconductor memory device includes a first memory cell connected to a first word line WL0, and a second memory cell connected to a second word line WL1 adjacent to the first word line and different in width from the first memory cell. A first voltage is applied to the first word line, and a second voltage different from the first voltage and corrected based on a difference in width between the first memory cell and the second memory cell is applied to the second word line. |
申请公布号 |
JP2011198413(A) |
申请公布日期 |
2011.10.06 |
申请号 |
JP20100064738 |
申请日期 |
2010.03.19 |
申请人 |
TOSHIBA CORP |
发明人 |
SHIINO YASUHIRO;TAKAHASHI SAKANOBU |
分类号 |
G11C16/02;G11C16/04;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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