发明名称 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device which can improve operation reliability.SOLUTION: The nonvolatile semiconductor memory device includes a first memory cell connected to a first word line WL0, and a second memory cell connected to a second word line WL1 adjacent to the first word line and different in width from the first memory cell. A first voltage is applied to the first word line, and a second voltage different from the first voltage and corrected based on a difference in width between the first memory cell and the second memory cell is applied to the second word line.
申请公布号 JP2011198413(A) 申请公布日期 2011.10.06
申请号 JP20100064738 申请日期 2010.03.19
申请人 TOSHIBA CORP 发明人 SHIINO YASUHIRO;TAKAHASHI SAKANOBU
分类号 G11C16/02;G11C16/04;H01L21/8247;H01L27/10;H01L27/115;H01L29/788;H01L29/792 主分类号 G11C16/02
代理机构 代理人
主权项
地址