MULTI-LAYER SUPERLATTICE QUANTUM WELL THERMOELECTRIC MATERIAL AND MODULE
摘要
<p>A multi-layer superlattice quantum well thermoelectric material comprising at least 10 alternating layers has a layer thickness of each less than 50 nm, the alternating layers being electrically conducting and barrier layers, wherein the layer structure shows no discernible interdiffusion leading to a break-up or dissolution of the layer boundaries upon heat treatment at a temperature in the range from 50 to 150°C for a time of at least 100 hours and the concentration of doping materials in the conducting layers is 1018 to 1023 cm-3 and in the barrier layers is 1013 to 1018 cm-3.</p>
申请公布号
WO2011121561(A1)
申请公布日期
2011.10.06
申请号
WO2011IB51375
申请日期
2011.03.31
申请人
BASF SE;BASF (CHINA) COMPANY LIMITED;HAASS, FRANK;ELSNER, NORBERT B.;GHAMATY, SAED;KROMMENHOEK, DANIEL;HI-Z TECHNOLOGY, INC.
发明人
HAASS, FRANK;ELSNER, NORBERT B.;GHAMATY, SAED;KROMMENHOEK, DANIEL