SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that is easy to manufacture and has lower loss while securing a high breakdown voltage, and to provide a method of manufacturing the semiconductor device.SOLUTION: A Schottky diode 10 as a semiconductor device includes a substrate 11 made of a semiconductor and an n-type layer 12 formed on the substrate 11. The n-type layer 12 has a groove 13 formed to extend from a second surface 12B as a surface on the opposite side from a first surface 12A as a surface on the side of the substrate 11 toward the first surface 12A. An oxide layer 14 as an insulator is arranged at a position where it comes into contact with a bottom wall 13A as a bottom portion of the groove 13, and the groove 13 is filled with a metal film 15 capable of coming into Schottky contact with the n-type layer 12 so as to contact a sidewall 13B of the groove 13. Further, an anode electrode 16 is arranged so as to contact the second surface 12B of the n-type layer 12.