发明名称 |
CHALCOGENIDE ABSORBER LAYERS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME |
摘要 |
In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second. |
申请公布号 |
WO2011066370(A3) |
申请公布日期 |
2011.10.06 |
申请号 |
WO2010US57980 |
申请日期 |
2010.11.24 |
申请人 |
AQT SOLAR, INC.;GIRT, EROL;MUNTEANU, MARIANA |
发明人 |
GIRT, EROL;MUNTEANU, MARIANA |
分类号 |
H01L31/042;H01L21/20;H01L31/18 |
主分类号 |
H01L31/042 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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