发明名称 CHALCOGENIDE ABSORBER LAYERS FOR PHOTOVOLTAIC APPLICATIONS AND METHODS OF MANUFACTURING THE SAME
摘要 In one example embodiment, a method includes depositing one or more thin-film layers onto a substrate. More particularly, at least one of the thin-film layers comprises at least one electropositive material and at least one of the thin-film layers comprises at least one chalcogen material suitable for forming a chalcogenide material with the electropositive material. The method further includes annealing the one or more deposited thin-film layers at an average heating rate of or exceeding 1 degree Celsius per second. The method may also include cooling the annealed one or more thin-film layers at an average cooling rate of or exceeding 0.1 degrees Celsius per second.
申请公布号 WO2011066370(A3) 申请公布日期 2011.10.06
申请号 WO2010US57980 申请日期 2010.11.24
申请人 AQT SOLAR, INC.;GIRT, EROL;MUNTEANU, MARIANA 发明人 GIRT, EROL;MUNTEANU, MARIANA
分类号 H01L31/042;H01L21/20;H01L31/18 主分类号 H01L31/042
代理机构 代理人
主权项
地址