METHOD AND APPARATUS FOR IMPROVED WAFER SINGULATION

摘要

Laser singulation of electronic devices 12 from semiconductor substrates including wafers 180 is performed using up to 3 lasers 150, 160, 170 from 2 wavelength ranges. Using up to 3 lasers 150, 160, 170 from 2 wavelength ranges permits laser singulation of wafers 180 held by die attach film 184 while avoiding problems caused by single-wavelength dicing. In particular, using up to 3 lasers 150, 160, 170 from 2 wavelength ranges permits efficient dicing of semiconductor wafers 180 while avoiding debris and thermal problems associated with laser processing die attach tape 184.