| 摘要 |
PROBLEM TO BE SOLVED: To improve the performance of a semiconductor device having a nonvolatile memory, and to improve the reliability of the semiconductor device.SOLUTION: In the semiconductor device, a plurality of memory cells each composed of a memory transistor having a floating gate electrode FG and a control transistor connected to the memory transistor in series are arranged in an array shape in X and Y directions on the main surface of a semiconductor substrate. Bit wiring M1B which connects drain regions of the memory transistors of the memory cells arranged in the X direction is provided in the lowest layer of a wiring layer out of a laminated wiring structure formed on the semiconductor substrate so that the bit wiring M1B covers the entire floating gate electrode FG. |
