| 摘要 |
PROBLEM TO BE SOLVED: To provide a circuit simulator improving calculation accuracy of an impact ionization current.SOLUTION: In the circuit simulator, the impact ionization current Iii of a field effect transistor is calculated based on a drain transverse electric field Ecalculation formula in which a saturated source-drain voltage Vis given by a function of a source-gate voltage Vand a source-drain voltage V. |
