发明名称 |
ELECTRONIC ELEMENT, AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide an electronic element that uses a rare earth iron oxide, and to provide a method of manufacturing the same.SOLUTION: The electronic element has a PN junction formed by joining a first semiconductor layer and a second semiconductor layer together, wherein the first semiconductor layer is an oxide semiconductor layer formed of a copper oxide, and the second semiconductor layer is an oxide semiconductor layer formed of a rare earth iron oxide. The first semiconductor layer and second semiconductor layer are formed through: a film-forming step of forming a film by making the rare earth iron oxide made powdery adhere to the surface of a conductive layer formed of copper or copper alloy; and a heat treatment step of forming the second semiconductor layer of the film through a heat treatment and also forming the first semiconductor layer between the conductive layer and second semiconductor layer. |
申请公布号 |
JP2011198972(A) |
申请公布日期 |
2011.10.06 |
申请号 |
JP20100063624 |
申请日期 |
2010.03.19 |
申请人 |
OKAYAMA UNIV;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE & TECHNOLOGY |
发明人 |
IKEDA SUNAO;KOBE TAKASHI;BOKU SAIKAKU;AKETO JUN |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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