| 摘要 |
PROBLEM TO BE SOLVED: To provide a probe apparatus constituting a wafer probe for measuring electrical characteristics of a multi-electrode semiconductor device and a high-frequency circuit, especially a high-frequency probe including a hollow wiring structure, capable of high-frequency measurement of a logic circuit or an analog circuit.SOLUTION: The probe apparatus includes a signal wire 3a and a GND wire 3b provided by plating deposition on a substrate 2 in parallel at regular intervals, a probe needle 3c, a connector 6 connected to a connector contact 3d, a hollow structure 5 for insulating electrically the periphery of the signal wire 3a, and a metal body 7 for covering them. While keeping a fixed impedance by reducing a dielectric constant Er between the signal wire 3a and the GND wire 3b, high-speed transmission of a high-frequency electric signal is enabled, and a probe needle 1 is formed to have a two-stage structure so as to be supported by the substrate 2. Consequently, an overdrive amount of tips 3ca, 3cb, 3cc of the probe needle 3c can be increased in cooperation between springiness of the substrate 2 and springiness of the probe needle 3c, to thereby improve contact stability. |
