发明名称 |
Well implant through dummy gate oxide in gate-last process |
摘要 |
The present disclosure relates to methods for fabricating a field-effect transistor. The method includes performing a pocket implantation to a semiconductor substrate; thereafter forming a polysilicon layer on the semiconductor substrate; and patterning the polysilicon layer to form a polysilicon gate. The field-effect transistor (FET) includes a well of a first type dopant, formed in a semiconductor substrate; a metal gate disposed on the semiconductor substrate and overlying the well; a channel formed in the semiconductor substrate and underlying the metal gate; source and drain regions of a second type dopant opposite from the first type, the source and drain regions being formed in the semiconductor substrate and on opposite sides of the channel; and a pocket doping profile of the first type dopant and being defined in the well to form a continuous and uniform doping region from the source region to the drain region.
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申请公布号 |
US2011241127(A1) |
申请公布日期 |
2011.10.06 |
申请号 |
US20100789780 |
申请日期 |
2010.05.28 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HUNG SHENG CHIANG;HUANG HUAI-YING;WANG PING-WEI |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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