| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor having high current drive force and high cut-off characteristics.SOLUTION: The transistor in one embodiment includes: a graphene film 10 which is formed under a gate electrode 12 through a gate insulating film and provided with a conductor region 10a including a source side end 10S and a conductor region 10b including a drain side end 10D, and for which a width La in a channel width direction in the source side end 10S is narrower than a width Lb in the channel width direction in the drain side end 10D; a source electrode connected to the source side end 10S of the graphene film 10 to form a Schottky barrier contact; and a drain electrode connected to the drain side end 10D of the graphene film 10 to form an ohmic contact. |
