发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
摘要 PROBLEM TO BE SOLVED: To increase the reliability of an element by simplifying a manufacturing process, and increasing the luminous efficiency of the element in a light emitting element using a transparent conductive film as an electrode.SOLUTION: The transparent conductive film 10 is formed on the entire surface of a second semiconductor layer 108, and a photoresist is applied onto the formed transparent conductive film. When a photoresist on an upper part of an electrode forming part 16 of a first conductor layer 104 is to be removed, the photoresist is removed that the thickness of the remained photoresist is gradually reduced toward the removed part on a contour part of the removed part. The transparent conductive film is photo-etched by using the remained photoresist as a mask to expose a part of the second semiconductor layer. Dry-etching is performed by using the remained photoresist and the transparent conductive film as masks to expose the electrode forming part of the first semiconductor layer. The transparent conductive film part which is exposed by dry-etching by using the remained photoresist as the mask is wet-etched to remove the remained photoresist.
申请公布号 JP2011199122(A) 申请公布日期 2011.10.06
申请号 JP20100066087 申请日期 2010.03.23
申请人 TOYODA GOSEI CO LTD 发明人 NAKAJO NAOKI;KAMIYA MASAHISA;HONMA AKIHIRO
分类号 H01L33/38;H01L21/28;H01L33/42 主分类号 H01L33/38
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