SUBSTRATE WITH BUILT-IN SEMICONDUCTOR

摘要

Disclosed is a substrate with a built-in semiconductor, which can be formed thin and suppressed in generation of warping. Specifically disclosed is a substrate with a built-in semiconductor, which is characterized by comprising: a first semiconductor element that serves as a substrate; a second semiconductor element that is arranged on the circuit surface of the first semiconductor element such that the circuit surface of the second semiconductor element faces the same direction as the circuit surface of the first semiconductor element; and an insulating layer that internally contains the second semiconductor element. The substrate with a built-in semiconductor is also characterized in that a heat dissipation layer is arranged at least between the first semiconductor element and the second semiconductor element and the heat dissipation layer extends on the first semiconductor element to the outside of the second semiconductor element.